Topics Overview

PLENARY SPEAKERS

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Quantum Cascade Lasers
Claire Gmachl, Princeton University, USA

Advances in VCSELs for Communication and Sensing
Anders Larsson, Chalmers University of Technology, Sweden

Blue to Green Nitride LDs and InGaN-based White LEDs
Takashi Mukai, Nichia Corporation, Japan


INVITED SPEAKERS

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Progress in Room Temperature GaSb-based mid-IR Diode Lasers
Gregory L. Belenky, State University of New York at Stony Brook, USA

Semiconductor Lasers on Silicon
John E. Bowers, University of California – Santa Barbara, USA

High-Contrast Gratings and Its Incorporation in a VCSEL
Constance Chang-Hasnain, University of California - Berkeley, USA

95° C Uncooled 25-Gbps InGaAlAs DMLs
Toshihiko Fukamachi, Hitachi, Ltd., Japan

Large Scale Integration of Photonic Integrated Circuits on InP
Charles H. Joyner, Infinera, USA

InGaN based True Green Laser Diodes on Novel Semi-Polar {20-21} GaN Substrates
Takashi Kyono, Sumitomo Electric Industries, Inc., Japan

New Ultrafast High Power kW Class Lasers Open Next Generation Applications
Reinhart Poprawe, Fraunhofer Institut fur Lasertechnik, Germany

Electrically Driven Quantum Dot Micropillar Single Photon Sources
Stephan Reitzenstein, University of Wuerzburg, Germany

Recent Progress in Photonic Crystal Lasers
Kyosuke Sakai, Kyoto University, Japan

Ultra-short Optical Pulse Generation by InGaAs Quantum-Dot Diode Emitters
Ian H. White, University of Cambridge, UK